書誌事項
- タイトル別名
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- Surface-electromigration-induced Step Structure Transition on Si(111) Vicinal Surfaces(<Special Issue>Recent Trend of Crystal Growth Theory)
- 解説 Si(111)微斜面の表面エレクトロマイグレーション誘起ステップ構造転移
- カイセツ Si 111 ビシャメン ノ ヒョウメン エレクトロマイグレーション ユウキ ステップ コウゾウ テンイ
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The step structure transition between a regular step and a bunched step on vicinal Si (111) surfaces induced by DC is studied by the kinetic Monte Carlo simulation in a terrace-adatom-step-kink (TASK) model of a vicinal surface. In the TASK model, effective force due to DC is taken into account explicitly on both diffusion process of Si adatoms and capture/emission process at a step edge. In the capture-limited regime, step bunching is induced by stepdown force and a regular step is formed by step-up force, corresponding to the experimental temperature range I. In the diffusion-limited regime, step bunching is induced by step-up force and in-phase wandering is induced on a regular step by step-down force, corresponding to the experimental temperature range II. The relation of the two regimes with "non-transparent" and "transparent" conditions at step edges is discussed.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 29 (1), 44-49, 2002
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390001205896726272
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- NII論文ID
- 110002715521
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 6135137
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
