β-Ga<sub>2</sub>O<sub>3</sub> Crystal Growth by the Vertical Bridgman Technique
-
- Hoshikawa Keigo
- Faculty of Engineering,Shinshu University
-
- Ohoba Etsuko
- Fujikoshi Machinery Corp.
-
- Kobayashi Takumi
- Fujikoshi Machinery Corp.
Bibliographic Information
- Other Title
-
- VB法によるβ-Ga<sub>2</sub>O<sub>3</sub>結晶成長
Abstract
<p> A new approach to β-Ga2O3 single crystal growth was studied using a directional solidification process in a vertical Bridgman furnace in ambient air. The crucibles used were made of platinum-rhodium alloy as they are capable of withstanding high temperatures that exceed the melting temperature of β-Ga2O3 in ambient air.</p><p> We succeeded in growing 1-inch diameter β-Ga2O3 single crystals with a growth direction perpendicular to an (100) faceted plane without a seed crystal. We have also grown β-Ga2O3 single crystals from seed crystals cut from the single crystals previously grown without seed crystals. It was found that β-Ga2O3 single crystals could be grown in platinum-rhodium alloy crucibles in ambient air, with no adhesion of the crystal to the crucible wall. Thus, we confirmed that our new approach could be useful for growing β-Ga2O3 single crystals.</p>
Journal
-
- Journal of the Japanese Association for Crystal Growth
-
Journal of the Japanese Association for Crystal Growth 44 (4), n/a-, 2017
The Japanese Association for Crystal Growth
- Tweet
Details 詳細情報について
-
- CRID
- 1390001205896728576
-
- NII Article ID
- 130006327995
-
- ISSN
- 21878366
- 03856275
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- CiNii Articles
-
- Abstract License Flag
- Disallowed