Efficient Czochralski Solar-Grade Silicon Growth(<Special Issue>Single and Multi Crystalline Silicon)

DOI Web Site 27 References
  • Lan C. W.
    Department of Chemical Engineering National Taiwan University
  • Hsieh C. K.
    Sino-American Silicon (SAS) Products Inc. Science-Based Industrial Park
  • Hsu W. C.
    Sino-American Silicon (SAS) Products Inc. Science-Based Industrial Park

Bibliographic Information

Other Title
  • 効率的なチョクラルスキー法による太陽電池グレードのシリコン成長(<小特集>Si系単結晶・多結晶)
  • Efficient Czochralski Solar-Grade Silicon Growth

Search this article

Abstract

The fast growing photovoltaic market is mainly based on crystalline silicon. The strong demand on silicon requires wafer manufacturers to produce high-quality material through high productivity processes with low cost. Therefore, to remain the competition of single crystal silicon in the solar market, highly efficient Czochralski crystal growth is required. In this paper, we discuss some of the important issues in the production of solar-grade silicon by the Czochralski method. Special focuses will be on the hot-zone design and multiple charges. The implementation of these concepts has led to significant cost reduction and yield improvement for both 6" and 8" -diameter solar-grade silicon in production. Some comments for the future development are also given.

Journal

References(27)*help

See more

Details 詳細情報について

Report a problem

Back to top