Plate-like Crystal Growth in the Undercooled Silicon Melts(<Special Issue>Crystal Growth in Micro-Gravity)

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  • シリコン板状結晶の過冷却凝固(<小特集>微小重力環境を利用した結晶成長)
  • 解説 シリコン板状結晶の過冷却凝固
  • カイセツ シリコンバンジョウ ケッショウ ノ カレイキャク ギョウコ

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Abstract

Highly pure Si was undercooled by an electromagnetic levitator combined with a laser heating unit. The crystal growth velocity was measured as a function of undercooling and the appearance of the solid-liquid interface was observed by a high-speed camera. The result was compared with the predicted value based on the dendrite growth theory. The growth behaviors of Si were found to be classified into three categories of plate-like growth (region I) , isolated dendrite growth (II) , and closer dendrite growth (III) at low, moderate, and high undercooling values, respectively. The transition undercoolings for the classifications were 100 and 210 K. In region I, a thin plate crystal was split to several plates at the undercooling of over 50 K. A novel stability criterion for the transition was derived from the relationship between the plate thickness and the tip radius of the solidification front.

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