書誌事項
- タイトル別名
-
- Potential and Latest Development of Nitride Semiconductors(<Special Issue> Where are the Materials for Ultraviolet Devices and Where are These Going ?)
- 解説 窒化物半導体の新展開
- カイセツ チッカブツ ハンドウタイ ノ シン テンカイ
この論文をさがす
説明
Physical properties of nitride semiconductors are compared with other typical semiconductors. Developments of blue-green LEDs and blue-violet LDS are reviewed. Latest efforts to develop shorter wavelength LEDs and LDS with both shorter and longer wavelength are introduced. Low temperature growth and electrical and optical characterization of high quality InN films on sapphire by RF-MBE aredemonstrated. Using this high quality InN films, it is found by photoluminescence and optical absorption measurements that band-gap of InN is around 0.8 eV, which is much narrower than the reported value of 1.9 eV. Latest developments of high power and high frequency AIGaN/ GaN HFETs are also reported in this paper, which confirms high potential of nitride semiconductors in the application to high power and high frequency electronics fields. Finally, it is emphasized that studies on crystal growth technology and characterization are very important in developing wide variety of new generation electronic and optoelectronic devices using nitride semiconductors.
収録刊行物
-
- 日本結晶成長学会誌
-
日本結晶成長学会誌 29 (3), 259-267, 2002
日本結晶成長学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001205897528576
-
- NII論文ID
- 110002715689
-
- NII書誌ID
- AN00188386
-
- ISSN
- 21878366
- 03856275
-
- NDL書誌ID
- 6324794
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- NDL
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可
