Influence of Lattice Constraint from Substrate on Relationship between Input Mole Ratio and Solid Composition of InGaN during MBE and MOVPE(<Special issue>The Role of the Substrate in Determining the Properties of Epitaxial Group III Nitrides)

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  • Kangawa Yoshihiro
    Department of Applied Chemistry, Tokyo University of Agriculture and Technology
  • Ito Tomonori
    Department of Physics Engineering, Mie University
  • Kumagai Yoshinao
    Department of Applied Chemistry, Tokyo University of Agriculture and Technology
  • Koukitu Akinori
    Department of Applied Chemistry, Tokyo University of Agriculture and Technology

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Other Title
  • InGaN気相成長における気相-固相関係に対する基板拘束の影響(<小特集>ナノ構造・エピ成長分科会特集「窒化物半導体エピタキシャル成長における基板の役割」の再考)
  • InGaN気相成長における気相-固相関係に対する基板拘束の影響
  • InGaN キソウ セイチョウ ニ オケル キソウ コソウカンケイ ニ タイスル キバン コウソク ノ エイキョウ

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Thermodynamic analyses were performed to understand the influence of lattice constraint from InN and GaN substrates on the relationship between input mole ratio R_<In> (=P_<In>^0/ (P_<In>^0 + P_<Ga>^0), where P^0_i is the input partial pressure of element i) and solid composition x in In_xGa_<1-x>N during molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). For the both growth methods, the calculation results suggest that a compositionally unstable region is found at the InN-rich region for InGaN on GaN at higher temperatures while that for InGaN on InN can be seen at GaN-rich region due to the lattice constraint from the substrate. In case of the MOVPE, it is found that growth region of InGaN in the diagram related to V/III ratio and solid composition shrinks with increase of V/III ratio (increase of input partial pressure of NH_3). This is because the H_2 partial pressure produced by the decomposition of NH_3 increase at high V/III ratio (at high input partial pressure of NH_3).

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