Crystal Growth Technology of N-polar Nitride Semiconductors by Metalorganic Vapor Phase Epitaxy
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- Tanikawa Tomoyuki
- Institute for Materials Research, Tohoku University
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- Prasertsuk Kiattiwut
- Institute for Materials Research, Tohoku University
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- Kimura Takeshi
- Institute for Materials Research, Tohoku University
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- Kuboya Shigeyuki
- Institute for Materials Research, Tohoku University
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- Matsuoka Takashi
- Institute for Materials Research, Tohoku University
Bibliographic Information
- Other Title
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- 有機金属気相成長法によるN極性窒化物半導体の成長技術
Abstract
<p> N-polar III-nitride materials have been attracted attention for the application to InGaN-based optical devices and AlGaN-based electronic devices. Most of the III-nitride-based device structures have been grown using metalorganic vapor phase epitaxy. In this report, recent progress of crystal growth technology of N-polar III-nitride materials using metalorganic vapor phase epitaxy is reviewed. The growth of N-polar materials shows different behavior from that of Ga-polar materials, several optimizations of growth conditions are necessary. N-polar GaN often shows hillock structure at the surface. The use of vicinal substrates helps the suppression of hillock formation. InGaN growth often suffers from the inclusion of zinc-blende crystal phase. Growth at low supersaturation conditions is one of the solutions to obtain pure wurtzite InGaN films. To prevent hillock formation during the growth of AlGaN on N-polar GaN, lowering the growth rate is effective.</p>
Journal
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- Journal of the Japanese Association for Crystal Growth
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Journal of the Japanese Association for Crystal Growth 45 (1), n/a-, 2018
The Japanese Association for Crystal Growth
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Details 詳細情報について
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- CRID
- 1390001205898179072
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- NII Article ID
- 130006727544
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- ISSN
- 21878366
- 03856275
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- Text Lang
- ja
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- Data Source
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- JaLC
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed