SiC Bulk Single Crystal Growth(<Special Issue>)Opening Up a New World of Crystal Growth on SiC)

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  • Nishizawa Shin-ichi
    Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology

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  • SiCバルク単結晶成長の概要(<特集>SiCの現状と今後の展開)
  • SiCバルク単結晶成長の概要
  • SiC バルクタンケッショウ セイチョウ ノ ガイヨウ

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Abstract

SiC single crystal is usually grown by sublimation (modified Lely method). There is a lotof remaining issues that should be solved. One is the technical problems of SiC single crystal growth process. And the other is the theoretical problem based on SiC physical properties. As the example of technical issues, in this paper, the example of design optimization for SiC sublimation growth is described. The shape of SiC grown crystal (diameter and length) can be controlled by using modified crucible design. And as the example of the theoretical problem, the author has tried to use atomic scale modeling (DFT calculation) to understand the physics that determine SiC polytype during crystal growth process. By calculating the bulk crystal energy of each polytype, and surface energy of each possible surface during growth, it is pointed out that growing surface itself has effects on the polytype stability of SiC.

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