Growth of Single Crystalline AlN by Solution Growth Technique(<Special Issue>Bulk Crystals for Substrates)

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  • Kamei Kazuhito
    Corporate Research and Development Laboratories, Sumitomo Metal Industries Ltd.
  • Inoue Shigeru
    Institute of Industrial Science, University of Tokyo
  • Itoh Yutaka
    Corporate Research and Development Laboratories, Sumitomo Metal Industries Ltd.

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Other Title
  • 溶液成長法によるAlN単結晶の育成(<小特集>基板結晶)
  • 溶液成長法によるAlN単結晶の育成
  • ヨウエキ セイチョウホウ ニ ヨル AlNタンケッショウ ノ イクセイ

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Abstract

Growth behavior of single crystalline AlN from Cu-Al-Ti solution under the atmospheric pressure of nitrogen has been studied. The AlN nucleates epitaxially on the 6H-SiC substrate by super-cooling the solution heated to 1500-1600℃ by 700℃-800℃. The thick (8μm) AlN single crystalline film obtained by the cooling technique exhibited relatively low dislocation density such as 10^5/cm^2 near the growth surface. The growth rate was typically 2μm/hr. By placing the seed 6H-SiC wafer under the temperature gradient of 50℃/cm in the solution, we have grown the thick (10μm) AlN film with good crystallinity, which may pave the way to the continuous growth of AlN single crystal. High resolution TEM observation of the AlN/6H-SiC interface revealed the excellent coherency between these two materials.

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