Growth of β-Ga_2O_3 Single Crystalline and Fabrication of GaN by Nitridation(<Special Issue>Bulk Crystals for Substrates)

DOI IR HANDLE Web Site 44 References
  • Ohira Shigeo
    Nippon Light Metal Co. Ltd:Laboratory for Advanced Materials in Institute for Materials Research, Tohoku university
  • Yoshioka Masayuki
    Shizuoka Industrial Research Institute
  • Sugawara Takamasa
    Laboratory for Advanced Materials in Institute for Materials Research, Tohoku university
  • Nakajima Kazuo
    Laboratory for Advanced Materials in Institute for Materials Research, Tohoku university
  • Shishido Toetsu
    Laboratory for Advanced Materials in Institute for Materials Research, Tohoku university

Bibliographic Information

Other Title
  • β-Ga_2O_3単結晶の育成と窒化処理によるGaN形成(<小特集>基板結晶)
  • β-Ga2O3単結晶の育成と窒化処理によるGaN形成
  • ベータ Ga2O3タンケッショウ ノ イクセイ ト チッカ ショリ ニ ヨル GaN ケイセイ

Search this article

Abstract

The results of GaN formation on the surface of β-Ga_2O_3 single crystalline by nitridation is shown for the application of the substrates of the nitride semiconductors. β-Ga_2O_3 single crystalline was prepared by floating zone method, and its polished (100) plane was nitrided in NH_3 gas at 850℃ for 5 hours. It was demonstrated that polycrystal GaN with hexagonal structure was produced in the surface of β-Ga_2O_3, and the thickness of layers was approximately 50nm. High resolution TEM observation indicated that the synthesized GaN was composed of the aggregation with GaN particles, whose sizes range from 〜5nm to 〜50nm, and a GaN particle consists of defect free single crystalline. This method could be expected as a new route to prepare the bulk GaN substrate.

Journal

References(44)*help

See more

Details 詳細情報について

Report a problem

Back to top