14pXG-11 Electronic structure in cleavage process of semiconductor : surface reconstruction, anisotropic strain and step formation
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- Hoshi T.
- Dept. of Appl. Phys., Univ. of Tokyo
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- Iguchi Y.
- Dept. of Appl. Phys., Univ. of Tokyo
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- Fujiwara T.
- Dept. of Appl. Phys., Univ. of Tokyo
Bibliographic Information
- Other Title
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- 14pXG-11 半導体へき開プロセスの電子論描像 : 表面再構成・異方的ひずみ・ステップ形成の競合(表面界面構造 : 半導体, 領域 9)
Journal
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- Meeting Abstracts of the Physical Society of Japan
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Meeting Abstracts of the Physical Society of Japan 59.2.4 (0), 822-, 2004
The Physical Society of Japan
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Details 詳細情報について
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- CRID
- 1390001206000180992
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- NII Article ID
- 110002050486
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- ISSN
- 21890803
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- Text Lang
- ja
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- Data Source
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- JaLC
- CiNii Articles