823 SiGe p 型と n 型半導体を焦結接合により製作した熱電変換素子の形状が効率に及す影響

書誌事項

タイトル別名
  • The Influence of the Configuration to the Performance of Thermoelectric Elements made by SiGe p-type and n-type semiconductors

この論文をさがす

抄録

The simulation model of the two types of thermoelectric elements is made by using Finite Difference Method. The simulated results are compared to the experimental data. In spite of the large resistance in the experimental data, calculated results are in agreement with experimental data. An optimum configuration of the thermoelectric element is obtained.

収録刊行物

詳細情報 詳細情報について

問題の指摘

ページトップへ