書誌事項
- タイトル別名
-
- The Influence of the Configuration to the Performance of Thermoelectric Elements made by SiGe p-type and n-type semiconductors
この論文をさがす
抄録
The simulation model of the two types of thermoelectric elements is made by using Finite Difference Method. The simulated results are compared to the experimental data. In spite of the large resistance in the experimental data, calculated results are in agreement with experimental data. An optimum configuration of the thermoelectric element is obtained.
収録刊行物
-
- 年次大会講演論文集
-
年次大会講演論文集 2003.1 (0), 221-222, 2003
一般社団法人 日本機械学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001206059751680
-
- NII論文ID
- 110002524943
-
- NII書誌ID
- AA11461871
-
- ISSN
- 24331325
-
- HANDLE
- 10297/2117
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- IRDB
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可