書誌事項
- タイトル別名
-
- 1806 Phase-field simulation of island formation in strained epitaxial thin film
抄録
The morphological evolution of a strained heteroepitaxial thin film of Si_<1-x>Ge_x/Si during deposition has been investigated by two-dimensional phase-field simulations. The developed phase-field model can create the facet morphologies which are modeled using the generalized gradient correction coefficient for a crystal with a high anisotropy of surface energy, and can simulate the sequence of shape transitions which is well known in Si_<1-x>Ge_x/Si(001) system: 2D wetting layer, faceted 3D pyramids, and multifaceted domes. The effects of Ge composition, mobility for phase field and deposition rate on the island formation process and the island evolutions have been studied here. Some typical and important phenomena observed, in previous experimental studies, during Si_<1-x>Ge_x/Si(001) heteroepitaxy have been able to simulate by the developed phase-field model.
収録刊行物
-
- 年次大会講演論文集
-
年次大会講演論文集 2005.6 (0), 209-210, 2005
一般社団法人 日本機械学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001206061622016
-
- NII論文ID
- 110006191165
-
- ISSN
- 24331325
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可