Frequency Stabilization of a Semiconductor Laser under Direct Frequency Shift Keying Using the Saturated Absorption Signal.

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  • Sato Takashi
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Niigata University, 8050 Ikarashi 2–no–cho, Niigata 950–21
  • Mizumoto Jun"ichi
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Niigata University, 8050 Ikarashi 2–no–cho, Niigata 950–21
  • Kobayashi Yoshihisa
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Niigata University, 8050 Ikarashi 2–no–cho, Niigata 950–21
  • Ishiguro Makoto
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Niigata University, 8050 Ikarashi 2–no–cho, Niigata 950–21
  • Ohkawa Masashi
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Niigata University, 8050 Ikarashi 2–no–cho, Niigata 950–21
  • Maruyama Takeo
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Niigata University, 8050 Ikarashi 2–no–cho, Niigata 950–21
  • Shimba Minoru
    Faculty of Engineering, Tokyo Denki University, 2–2 Kanda Nishikicho, Chiyoda–ku, Tokyo 101

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Description

The oscillating frequency of a semiconductor laser was stabilized at the Rb-D2 absorption line under direct frequency shift keying (FSK). The control system equipped with a peak-hold circuit provided the frequency stability of 10-9>σ (2, τ)>10-12 at the averaging time 0.05 s<τ <40 s when the Doppler-limited absorption line was used as a frequency reference. This stability was better than that obtained by the traditional control system without the peak-hold circuit under direct FSK. Using the saturated absorption signal, the frequency stability was improved more than one order of magnitude in comparison with that obtained using the Doppler-limited absorption signal.

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