Violet and Near-UV Light Emission from GaN/Al<sub> 0.08</sub>Ga<sub> 0.92</sub>N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy

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  • Kuga Yuichiro
    Department of Electronic Engineering, Kohgakuin University, 2665–1 Nakano–machi, Hachiohji–shi, Tokyo 192, Japan
  • Shirai Toshio
    Department of Electronic Engineering, Kohgakuin University, 2665–1 Nakano–machi, Hachiohji–shi, Tokyo 192, Japan
  • Haruyama Makiko
    Department of Electronic Engineering, Kohgakuin University, 2665–1 Nakano–machi, Hachiohji–shi, Tokyo 192, Japan
  • Kawanishi Hideo
    Department of Electronic Engineering, Kohgakuin University, 2665–1 Nakano–machi, Hachiohji–shi, Tokyo 192, Japan
  • Suematsu Yasuharu
    Department of Electronic Engineering, Kohgakuin University, 2665–1 Nakano–machi, Hachiohji–shi, Tokyo 192, Japan

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タイトル別名
  • Violet and Near-UV Light Emission from GaN/Al0.08Ga0.92N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy.

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説明

GaN/Al0.08Ga0.92N double-heterostructure (DH) was grown on (0001)-oriented 6H-SiC substrate by low-pressure metal-organic vapor phase epitaxy (LP MO-VPE). The main peak wavelength at room temperature from GaN/Al0.08Ga0.92N DH injection diode was 420 nm which originated in the band-to-impurity transition in GaN. A weak peak at 360 nm was also observed.

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