Optical Characterization of Si<sub>1-x</sub>C<sub>x</sub>/Si ( 0≤x≤0.014) Semiconductor Alloys

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  • Lee Hosun
    Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185–0601, USA
  • Kurtz S. R.
    Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185–0601, USA
  • Floro J. A.
    Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185–0601, USA
  • Strane J.
    Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185–0601, USA
  • Seager C. H.
    Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185–0601, USA
  • Lee S. R.
    Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185–0601, USA
  • Jones E. D.
    Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185–0601, USA
  • Nelson J. F.
    Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185–0601, USA
  • Mayer T.
    Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185–0601, USA
  • Picraux S. T.
    Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185–0601, USA

書誌事項

タイトル別名
  • Optical Characterization of Si1-xCx/Si (0.LEQ.x.LEQ.0.014) Semiconductor Alloys.

説明

We have characterized the optical properties of heteroepitexial Si1- xC x/Si (0≤ x≤ 0.014) alloys grown on Si substrates by solid phase epitaxy using spectroscopic ellipsometry and photoluminescence. The measured dielectric function confirms that the samples are of good crystalline quality. The 14-K photoluminescence spectra of Si1- xC x/Si show several defect peaks. After hydrogen passivation, we observed a new peak near 1.15-1.17 eV which increases in energy with the incorporation of carbon. We tentatively assign this peak to the no-phonon peak of the Si1- xC x epi-layer. We discuss the alloy shift of the observed spectroscopic features in terms of the C-induced change in the Si indirect band gap.

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