TiO2 Thin Films Formed by Electron Cyclotron Resonance Plasma Oxidation at High Temperature and Their Application to Capacitor Dielectrics.

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  • Abe Yoshio
    Hitachi Research Laboratory, Hitachi, Ltd., 7–1–1 Omika–cho, Hitachi–shi, Ibaraki 319–12
  • Fukuda Takuya
    Hitachi Research Laboratory, Hitachi, Ltd., 7–1–1 Omika–cho, Hitachi–shi, Ibaraki 319–12

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  • TiO<sub>2</sub> Thin Films Formed by Electron Cyclotron Resonance Plasma Oxidation at High Temperature and Their Application to Capacitor Dielectrics

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Low-leakage-current rutile- TiO2 thin films were fabricated by electron cyclotron resonance (ECR) plasma oxidation of Ti thin films. Rutile- TiO2 thin films could be obtained at substrate temperatures above 280°C. A relative dielectric constant of about 120 was obtained at substrate temperatures above 390°C. Leakage current characteristics of the TiO2 thin films were improved by using high-temperature plasma oxidation and high-work-function electrodes. A leakage current of less than 1× 10-8 A/cm2 at an applied voltage of 1.25 V was obtained for a Au/TiO2/Pt capacitor with SiO2 equivalent thickness of 4.9 nm.

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