Suppression of Boron Penetration in P<sup>+</sup>-Poly-Si Gate Metal-Oxide-Semiconductor Transistor Using Nitrogen Implantation

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  • Chao T. S.
    National Nano Device Laboratories, 1001–1 Ta Hsueh Rd., Hsinchu 300, Taiwan, R.O.C.
  • Chien C. H.
    Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
  • Hao C. P.
    Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
  • Liaw M. C.
    National Nano Device Laboratories, 1001–1 Ta Hsueh Rd., Hsinchu 300, Taiwan, R.O.C.
  • Chu C. H.
    National Nano Device Laboratories, 1001–1 Ta Hsueh Rd., Hsinchu 300, Taiwan, R.O.C.
  • Chang C. Y.
    National Nano Device Laboratories, 1001–1 Ta Hsueh Rd., Hsinchu 300, Taiwan, R.O.C. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
  • Lei T. F.
    National Nano Device Laboratories, 1001–1 Ta Hsueh Rd., Hsinchu 300, Taiwan, R.O.C. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
  • Sun W. T.
    Semiconductor Technology and Application Research (STAR) Group, Department of Electrical Engineering, National Tsing–Hua University, Hsinchu 300, Taiwan, R.O.C.
  • Hsu C. H.
    Semiconductor Technology and Application Research (STAR) Group, Department of Electrical Engineering, National Tsing–Hua University, Hsinchu 300, Taiwan, R.O.C.

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タイトル別名
  • Suppression of Boron Penetration in P+-Poly-Si Gate Metal-Oxide-Semiconductor Transistor Using Nitrogen Implantation.
  • Suppression of Boron Penetration in P+P

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The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p+-poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-N complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.

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