Missing-Dimer Structures and Their Kink Defects on Molecular Beam Epitaxially Grown (2*4) Reconstructed (001) InP and GaAs Surfaces Studied by Ultrahigh-Vacuum Scanning Tunneling Microscopy.

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  • Ishikawa Yasuhiko
    Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, N13 W8, Sapporo 060, Japan
  • Fukui Takashi
    Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, N13 W8, Sapporo 060, Japan
  • Hasegawa Hideki
    Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, N13 W8, Sapporo 060, Japan

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  • Missing-Dimer Structures and Their Kink Defects on Molecular Beam Epitaxially Grown(2×4)Reconstructed(001)InP and GaAs Surfaces Studied by Ultrahigh-Vacuum Scanning Tunneling Microscopy
  • Missing-Dimer Structures and Their Kink

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Abstract

InP and GaAs(001)-(2× 4) reconstructed surfaces prepared by molecular beam epitaxy (MBE) were studied by ultrahigh-vacuum scanning tunneling microscopy (UHV-STM) in combination with X-ray photoelectron spectroscopy (XPS). It was found that the missing dimers and their kink defects on InP have remarkably different properties from those of GaAs. Based on this finding, a new missing-dimer structure is proposed for InP (2× 4) surfaces. As to the kink defects, no correlation was found on InP between the kink defect density and the Si doping level, although the XPS peaks clearly showed existence of Fermi level pinning. Thus, the model proposed recently by Pashley et al. does not apply to the InP surface.

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