Characteristics of Nonalloyed Pseudomorphic High Electron Mobility Transistors Using InAs/InxGa1-xAs(x=1→0)/AlyGa1-yAs(y=0→0.3)Contact Structures

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  • Chen Sheu–Shung
    Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
  • Lin Chien–Cheng
    Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
  • Lan Wen–Ho
    Materials R&D Center, Chung Shan Institute of Science and Technology, Lung–tan 325, Taiwan, R.O.C.
  • Tu Sun–Li
    Materials R&D Center, Chung Shan Institute of Science and Technology, Lung–tan 325, Taiwan, R.O.C.
  • Peng Chin–Kun
    Materials R&D Center, Chung Shan Institute of Science and Technology, Lung–tan 325, Taiwan, R.O.C.

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タイトル別名
  • Characteristics of Nonalloyed Pseudomorphic High Electron Mobility Transistors Using InAs/InxGa1-xAs (x=1.RAR.0)/AlyGa1-yAs (y=0.RAR.0.3) Contact Structutes.
  • Characteristics of Nonalloyed Pseudomor
  • Characteristics of Nonalloyed Pseudomorphic High Electron Mobility Transistors Using InAs/In<sub>x</sub>Ga<sub>1-x</sub>As (x=1→0)/Al<sub>y</sub>Ga<sub>1-y</sub>As (y=0→0.3) Contact Structures

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説明

A molecular beam epitaxy InAs/ In xGa1- xAs (x=1→ 0)/ Al yGa1- yAs (y=0→ 0.3) heterojunction was used as an ohmic contact structure to the GaAs-based pseudomorphic high electron mobility transistors (PHEMTs). This nonalloyed PHEMT had a specific contact resistance r c of 1.05× 10-7 Ω· cm2 and an extrinsic transconductance g me of 272 mS/mm for devices with 1 µ m gate-length. Microwave measurements showed a current gain cut-off frequency f t of 22 GHz and a maximum oscillation frequency f max of 43 GHz. These results are comparable to our best conventional PHEMTs' alloyed at 450° C and 2 min duration. Meanwhile, a small-signal equivalent circuit model of the nonalloyed PHEMT has also been demonstrated.

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