Stark Ladder Photoluminescence of X States in GaAs/AlAs Type-1 Superlattices
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- Ohtani Naoki
- ATR Adaptive Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
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- Hosoda Makoto
- ATR Optical and Radio Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
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- Mimura Hidenori
- ATR Optical and Radio Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
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- Tominaga Koji
- ATR Optical and Radio Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
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- Watanabe Toshihide
- ATR Adaptive Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
書誌事項
- タイトル別名
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- Stark Ladder Photoluminescence of X States in GaAs/AlAs Type-I Superlattices.
- Stark Ladder Photoluminescence of X Sta
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説明
We report on an observation of Stark ladder photoluminescence (PL) of X states in GaAs/AlAs type-I superlattices. The PL line exhibits a linear blue shift corresponding to one half the period of the superlattice with increasing bias voltage. The PL intensity then becomes maximum when X1-Γ2 mixing occurs. Carrier sweep-out from the X states is drastically improved by the X1-Γ2 mixing. These results demonstrate that optical properties even in type-I superlattices are seriously affected by the mixing of X states with a higher Γ subband under an electric field.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 36 (3B), 1884-1887, 1997
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206247986944
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- NII論文ID
- 110003946909
- 210000040887
- 130004523523
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4196734
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- 本文言語コード
- en
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- JaLC
- NDLサーチ
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