Stark Ladder Photoluminescence of X States in GaAs/AlAs Type-1 Superlattices

  • Ohtani Naoki
    ATR Adaptive Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
  • Hosoda Makoto
    ATR Optical and Radio Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
  • Mimura Hidenori
    ATR Optical and Radio Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
  • Tominaga Koji
    ATR Optical and Radio Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
  • Watanabe Toshihide
    ATR Adaptive Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan

書誌事項

タイトル別名
  • Stark Ladder Photoluminescence of X States in GaAs/AlAs Type-I Superlattices.
  • Stark Ladder Photoluminescence of X Sta

この論文をさがす

説明

We report on an observation of Stark ladder photoluminescence (PL) of X states in GaAs/AlAs type-I superlattices. The PL line exhibits a linear blue shift corresponding to one half the period of the superlattice with increasing bias voltage. The PL intensity then becomes maximum when X1-Γ2 mixing occurs. Carrier sweep-out from the X states is drastically improved by the X1-Γ2 mixing. These results demonstrate that optical properties even in type-I superlattices are seriously affected by the mixing of X states with a higher Γ subband under an electric field.

収録刊行物

被引用文献 (1)*注記

もっと見る

参考文献 (15)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ