Noise Parameter Extraction of a GaAs MESFET with Monte-Carlo Simulation.

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  • Baek Jaemyoung
    Opto–Electronics Research Center, Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon 305–701, Korea
  • Kwon Youngse
    Opto–Electronics Research Center, Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon 305–701, Korea
  • Hong Songcheol
    Opto–Electronics Research Center, Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Taejon 305–701, Korea

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  • Noise Parameter Extraction of a GaAs ME

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All of the noise parameters of a GaAs metal-semiconductor field-fffect transistor (MESFET) are extracted using 2-dimensional Monte-Carlo simulation for the first time. The general procedure for extracting the noise parameters is presented. The spectrums and correlations of the input-equivalent noise-voltage and noise-current sources are calculated. The y parameters of a GaAs MESFET are also extracted to obtain noise parameters and to analyze device characteristics for the first time.

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