InGaP/GaAs Sub-Square-Micron Emitter HBT with f<sub>max</sub> > 100 GHz

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  • Hirata Koji
    Hitachi ULSI Engineering Corporation, 5–20–1, Josuihon–cho, Kodaira, Tokyo 187, Japan
  • Tanoue Tomonori
    Central Research Laboratory, Hitachi Ltd., 1–280, Higashi–Koigakubo, Kokubunji, Tokyo 185, Japan
  • Masuda Hiroshi
    Central Research Laboratory, Hitachi Ltd., 1–280, Higashi–Koigakubo, Kokubunji, Tokyo 185, Japan
  • Uchiyama Hiroyuki
    Central Research Laboratory, Hitachi Ltd., 1–280, Higashi–Koigakubo, Kokubunji, Tokyo 185, Japan
  • Terano Akihisa
    Central Research Laboratory, Hitachi Ltd., 1–280, Higashi–Koigakubo, Kokubunji, Tokyo 185, Japan

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タイトル別名
  • InGaP/GaAs Sub-Square-Micron Emitter HBT with fmax>100 GHz.
  • InGaP GaAs Sub-Square-Micron Emitter HB

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InGaP/GaAs heterojunction bipolar transistors (HBTs) with a sub-square-micron emitter have been fabricated using a novel self-aligned emitter etching process with low damage and good lateral and vertical controllability. HBTs with an emitter size of 0.4× 1.7 µ m fabricated using this process exhibited a current gain of 44 which is comparable to that of AlGaAs/GaAs HBTs. Furthermore, the HBTs exhibited excellent microwave performance. For an HBT with an emitter size of 0.4× 2.2 µ m, a cutoff frequency (f T) of 55 GHz and a maximum oscillation frequency (f max) of 100 GHz were reached at a collector current (I C) as low as 1.0 mA, and a peak f T of 62 GHz and a peak f max of 105 GHz were obtained at I C=2.3 mA. As far as we know, this f max is the highest reported for GaAs-based HBTs with an emitter area of less than 1 µ m2. This process is thus promising for fabrication of high-speed HBT ICs with low power consumption.

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