Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells.

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  • Takeuchi Tetsuya
    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan
  • Sota Shigetoshi
    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan
  • Katsuragawa Maki
    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan
  • Komori Miho
    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan
  • Takeuchi Hideo
    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan
  • Amano Hiroshi
    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan
  • Akasaki Isamu
    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan

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  • Quantum-Confined Stark Effect due to Pi

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Abstract

We have studied the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells. Our calculation suggests that an electric field of 1.08 MV/cm is induced by the piezoelectric effect in strained Ga0.87In0.13N grown on GaN. The photoluminescence peak energy of the Ga0.87In0.13N strained quantum wells showed blue shift with increasing excitation intensity. Moreover, the well-width dependence of its luminescence peak energy was well explained when the piezoelectric fields were taken into account. These results clearly showed that the piezoelectric field induced the quantum-confined Stark effect.

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