Effect of the Field Dependent Permittivity and Interfacial Layer on Ba1-xKxBiO3/Nb-Doped SrTiO3 Schottky Junctions.

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  • Yamamoto Tetsuya
    Tsukuba Research Center, Sanyo Electric Co., Ltd., 2–1 Koyadai, Tsukuba, Ibaraki 305, Japan
  • Suzuki Seiji
    Tsukuba Research Center, Sanyo Electric Co., Ltd., 2–1 Koyadai, Tsukuba, Ibaraki 305, Japan
  • Suzuki Hiroshi
    Tsukuba Research Center, Sanyo Electric Co., Ltd., 2–1 Koyadai, Tsukuba, Ibaraki 305, Japan
  • Kawaguchi Kenichi
    Tsukuba Research Center, Sanyo Electric Co., Ltd., 2–1 Koyadai, Tsukuba, Ibaraki 305, Japan
  • Takahashi Kazuhiko
    Tsukuba Research Center, Sanyo Electric Co., Ltd., 2–1 Koyadai, Tsukuba, Ibaraki 305, Japan
  • Yoshisato Yorinobu
    Tsukuba Research Center, Sanyo Electric Co., Ltd., 2–1 Koyadai, Tsukuba, Ibaraki 305, Japan

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  • Effect of the Field Dependent Permittiv
  • Effect of the Field Dependent Permittivity and Interfacial Layer on Ba<sub>1-x</sub>K<sub>x</sub>BiO<sub>3</sub>/Nb-Doped SrTiO<sub>3</sub> Schottky Junctions

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Abstract

The electrical properties of Ba1- xK xBiO3/Nb-doped SrTiO3 all-oxide-type Schottky junctions have been investigated by measuring their current-voltage and capacitance-voltage ( C-V ) characteristics at room temperature. The relative permittivity ε r of Nb-doped SrTiO3 could be approximated as ε r(E)=b/√ {a+E2}, where E is the electric field, a and b are constants. Taking into account the field dependent permittivity and interfacial layer, we carried out a quantitative analysis of the potential barrier and 1/C2-V characteristics. The non-linear 1/C2-V characteristics could be quantitatively explained by considering the field dependent permittivity and the bias dependence of the barrier height due to the presence of the interfacial layer.

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