Kinetics and Depth Distributions of Oxygen Implanted into Si Analyzed by the Monte Carlo Simulation of Extended TRIM.
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- Yoneda Tomoaki
- Ion Engineering Research Institute Corporation, Hirakata, Osaka 573–01, Japan
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- Kajiyama Kenji
- Ion Engineering Research Institute Corporation, Hirakata, Osaka 573–01, Japan
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- Tohjou Fumiyo
- Matsushita TechnoResearch Incorporation, Moriguchi, Osaka 570, Japan
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- Yoshioka Yoshiaki
- Matsushita TechnoResearch Incorporation, Moriguchi, Osaka 570, Japan
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- Ikeda Atsushi
- Department of Physics, Ritsumeikan University Kusatsu, Shiga 525–77, Japan
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- Kisaka Yoshiaki
- Department of Physics, Ritsumeikan University Kusatsu, Shiga 525–77, Japan
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- Nishimura Tomoaki
- Department of Physics, Ritsumeikan University Kusatsu, Shiga 525–77, Japan
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- Kido Yoshiaki
- Department of Physics, Ritsumeikan University Kusatsu, Shiga 525–77, Japan
書誌事項
- タイトル別名
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- Kinetics and Depth Distributions of Oxy
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抄録
We precisely measure the depth profiles of 50-200 keV 18O+ implanted into Si and SiO2 by secondary ion mass spectrometry (SIMS) and then best-fit the on. The O-profiles derived from the RBS analysis are compared with those calculated by the extended TRIM. The present analysis revealed that the O-atoms implanted at 550° C migrated toward the surface before reaching the stoichiometry ( SiO2). The diffusion coefficient was estimated to be about 1× 10-14 cm2/ s, which was about 2 orders of magnitude larger than the value for 16O in crystalline Si at 550° C. This is possibly due to the induced dense defects distributed from the mean depth of 16O toward the surface (enhanced diffusion).
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 36 (12A), 7323-7328, 1997
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206248180864
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- NII論文ID
- 210000042084
- 110003906047
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4371543
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可