Thin CoSi<sub>2</sub> Formation on SiO<sub>2</sub> with Low-Energy Ion Irradiation

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  • Matsushita Atsushi
    Department of Electronic Device Engineering, Kyushu University, 6–10–1 Hakozaki, Higashi–ku, Fukuoka 812–8581, Japan
  • Sadoh Taizoh
    Department of Electronic Device Engineering, Kyushu University, 6–10–1 Hakozaki, Higashi–ku, Fukuoka 812–8581, Japan
  • Tsurushima Toshio
    Department of Electronic Device Engineering, Kyushu University, 6–10–1 Hakozaki, Higashi–ku, Fukuoka 812–8581, Japan

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タイトル別名
  • Thin CoSi2 Formation on SiO2 with Low-Energy Ion Irradiation.
  • Thin CoSi2 Formation on SiO2 with Low-E

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Cobalt silicides were formed by heat treatment and ion irradiation for stacked 7 nm Co and 25 nm Si layers on 20 nm SiO2 films. Irradiation was performed with 25 keV Ar+ ions to a dose of 5 × 1015 cm-2 at sample temperatures between room temperature and 700°C. The phase, atomic concentration profiles, and sheet resistance of the silicide layers were investigated as a function of the processing temperature. X-ray diffraction measurement showed that the phase of CoSi2 was formed by irradiation at temperatures above 300°C, and X-ray photoelectron spectroscopy measurement revealed uniform distributions of Co and Si atoms with the atomic ratio of Co:Si=1:2 for samples irradiated at temperatures above 200°C. Sheet resistance measurement showed that almost complete di-silicidation occurred by irradiation at 700°C. It is concluded that the energy deposited by ions contributes to the migration of the species for silicidation at a lower temperature, and Co/Si mixed layers with an atomic ratio of 1:2 are easily obtained by irradiation of the stacked thin films with low-energy ions. Since the silicide regions formed in the deposited thin films were decomposed during the irradiation at temperatures below 700°C, thermal annealing at 700°C is necessary to obtain completely uniform CoSi2 layers after the irradiation.

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