Cathodoluminescence Imaging of n-Type Porous Silicon.

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  • Itoh Masashi
    Department of Physics, Tokyo Institute of Technology, Oh–okayama, Meguro, Tokyo 152, Japan
  • Yamamoto Naoki
    Department of Physics, Tokyo Institute of Technology, Oh–okayama, Meguro, Tokyo 152, Japan
  • Takemoto Kuniko
    Department of Metallurgical Engineering, Tokyo Institute of Technology, Oh–okayama, Meguro, Tokyo 152, Japan
  • Nittono Osamu
    Department of Metallurgical Engineering, Tokyo Institute of Technology, Oh–okayama, Meguro, Tokyo 152, Japan

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  • Cathodoluminescence Imaging of n-Type P

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Abstract

Cathodoluminescence (CL) from n-type porous silicon (PS) was studied using a transmission electron microscope (TEM) equipped with the CL detection system. Two luminescence peaks at wavelengths of 660 nm and 420 nm were observed from a cross-sectional sample. The monochromatic CL images clearly reveal the spatial distribution of these luminescences along the depth direction; the 660 nm luminescence is mainly from near the top surface of the PS layer and the 420 nm luminescence the interface between the PS layer and Si substrate. The increase of the 420 nm luminescence intensity upon removal of the Si substrate suggests that the excited carriers in the residual Si matrix of the PS take part in the 420 nm luminescence.

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