Citric Acid Etching of ZnSe Surface and Application to the Homoepitaxy by Molecular Beam Epitaxy.

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  • Wakao Kazuhiro
    Department of Electronics and Mechanical Engineering, Chiba University, 1–33 Yayoi–cho, Inage–ku, Chiba 263–8255, Japan
  • Nakamura Shin–ichiro
    Department of Electronics and Mechanical Engineering, Chiba University, 1–33 Yayoi–cho, Inage–ku, Chiba 263–8255, Japan
  • Jia Anwei
    Department of Electronics and Mechanical Engineering, Chiba University, 1–33 Yayoi–cho, Inage–ku, Chiba 263–8255, Japan
  • Kobayashi Masakazu
    Department of Electronics and Mechanical Engineering, Chiba University, 1–33 Yayoi–cho, Inage–ku, Chiba 263–8255, Japan
  • Yoshikawa Akihiko
    Department of Electronics and Mechanical Engineering, Chiba University, 1–33 Yayoi–cho, Inage–ku, Chiba 263–8255, Japan
  • Shimotomai Michio
    Department of Electronics and Mechanical Engineering, Chiba University, 1–33 Yayoi–cho, Inage–ku, Chiba 263–8255, Japan
  • Kato Yoshinori
    Department of Electronics and Mechanical Engineering, Chiba University, 1–33 Yayoi–cho, Inage–ku, Chiba 263–8255, Japan
  • Takahashi Kiyoshi
    Department of Electronics and Information Science, Teikyo University of Science and Technology, 2525 Yatsuzawa, Uenohara–machi, Kitatsuru–gun, Yamanashi 409–0193, Japan

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  • Citric Acid Etching of ZnSe Surface and

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説明

A citric acid based etchant was applied to ZnSe. The etching rate could be controlled by adjusting the mixture ratio as well as the etchant temperature. By choosing an appropriate mixture ratio and temperature, a surface smoothness of ZnSe after citric acid etching was as good as those of molecular beam epitaxy (MBE) grown ZnSe epilayers. Homoepitaxial layers of ZnSe grown by MBE using this etching treatment showed excellent film qualities based on X-ray rocking curve, cross-sectional transmission electron microscopy, and low-temperature photoluminescence measurements.

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