Citric Acid Etching of ZnSe Surface and Application to the Homoepitaxy by Molecular Beam Epitaxy.
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- Wakao Kazuhiro
- Department of Electronics and Mechanical Engineering, Chiba University, 1–33 Yayoi–cho, Inage–ku, Chiba 263–8255, Japan
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- Nakamura Shin–ichiro
- Department of Electronics and Mechanical Engineering, Chiba University, 1–33 Yayoi–cho, Inage–ku, Chiba 263–8255, Japan
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- Jia Anwei
- Department of Electronics and Mechanical Engineering, Chiba University, 1–33 Yayoi–cho, Inage–ku, Chiba 263–8255, Japan
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- Kobayashi Masakazu
- Department of Electronics and Mechanical Engineering, Chiba University, 1–33 Yayoi–cho, Inage–ku, Chiba 263–8255, Japan
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- Yoshikawa Akihiko
- Department of Electronics and Mechanical Engineering, Chiba University, 1–33 Yayoi–cho, Inage–ku, Chiba 263–8255, Japan
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- Shimotomai Michio
- Department of Electronics and Mechanical Engineering, Chiba University, 1–33 Yayoi–cho, Inage–ku, Chiba 263–8255, Japan
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- Kato Yoshinori
- Department of Electronics and Mechanical Engineering, Chiba University, 1–33 Yayoi–cho, Inage–ku, Chiba 263–8255, Japan
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- Takahashi Kiyoshi
- Department of Electronics and Information Science, Teikyo University of Science and Technology, 2525 Yatsuzawa, Uenohara–machi, Kitatsuru–gun, Yamanashi 409–0193, Japan
書誌事項
- タイトル別名
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- Citric Acid Etching of ZnSe Surface and
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説明
A citric acid based etchant was applied to ZnSe. The etching rate could be controlled by adjusting the mixture ratio as well as the etchant temperature. By choosing an appropriate mixture ratio and temperature, a surface smoothness of ZnSe after citric acid etching was as good as those of molecular beam epitaxy (MBE) grown ZnSe epilayers. Homoepitaxial layers of ZnSe grown by MBE using this etching treatment showed excellent film qualities based on X-ray rocking curve, cross-sectional transmission electron microscopy, and low-temperature photoluminescence measurements.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 37 (6B), L749-L751, 1998
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206249262208
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- NII論文ID
- 210000044608
- 110003927588
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- NII書誌ID
- AA10650595
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4525658
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDLサーチ
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- 抄録ライセンスフラグ
- 使用不可