IrO<sub>2</sub>/Pb(Zr<sub>x</sub>Ti<sub>1-x</sub>)O<sub>3</sub>(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to an Interlayer-Dielectric-Deposition Process
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- Kushida–Abdelghafar Keiko
- Central Research Laboratory, Hitachi Limited, Kokubunji, Tokyo 185, Japan
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- Fujisaki Yoshihisa
- Central Research Laboratory, Hitachi Limited, Kokubunji, Tokyo 185, Japan
書誌事項
- タイトル別名
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- IrO2/Pb(ZrxTi1-x)03(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to an Interlayer-Dielectric-Deposition Process.
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説明
Resistance of the IrO2/PZT/Pt ferroelectric capacitor to the ambient of an interlayer-dielectric-deposition process is investigated for integrating the capacitor in a ferroelectric nonvolatile memory. Silicon dioxide films are deposited on the capacitor as the interlayer dielectric by plasma-enhanced chemical vapor deposition (CVD) using SiH4 and N2O gases. Degradation of ferroelectric characteristics reported so far for Pt/PZT/Pt capacitors is found to be significantly suppressed in the IrO2/PZT/Pt structure. This is because IrO2 does not show a catalytic effect as exhibited by a platinum electrode which causes hydrogen decomposition during the CVD processes. Hence, the IrO2/PZT/Pt capacitor structure proposed by us did not undergo the degradation in the process.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 37 (7A), L804-L805, 1998
The Japan Society of Applied Physics
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キーワード
詳細情報 詳細情報について
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- CRID
- 1390001206249577472
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- NII論文ID
- 110003927606
- 210000044627
- 130004525158
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- NII書誌ID
- AA10650595
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- COI
- 1:CAS:528:DyaK1cXkvVSrsrY%3D
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/00214922
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可