Design of Beamline Optics for Large-Field Exposure.

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  • Hasegawa Masaki
    Super–fine SR Lithography laboratory, Association of Super–Advanced Electronics Technologies (ASET), Atsugi, Kanagawa 243–0198, Japan
  • Gomei Yoshio
    Super–fine SR Lithography laboratory, Association of Super–Advanced Electronics Technologies (ASET), Atsugi, Kanagawa 243–0198, Japan
  • Hisatsugu Tokushige
    Super–fine SR Lithography laboratory, Association of Super–Advanced Electronics Technologies (ASET), Atsugi, Kanagawa 243–0198, Japan

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説明

New mirror designs for an X-ray lithography (XRL) beamline have been devised for the large-field, high-power irradiation of wafers. In contrast to analytically described mirrors, such as toroids, ellipsoids, etc., the new shapes were numerically determined. The design method employed was developed by Xiao, et al. A beamline employing such an optimized mirror design should provide a high X-ray power density of 58 mW/cm2 over a 50-mm-square exposure area, and 88 mW/cm2 over a 40-mm-square exposure area, with a uniformity of better than ±2%. The slope error margin was also estimated using numerical simulations, and it was found that the exposure characteristics do not degrade when the slope error is less than 25 arcsecs over the whole surface of the mirror.

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