Oxide Thin Film Diode Fabricated by Liquid-Phase Method.

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  • Ohya Yutaka
    Department of Applied Chemistry, Faculty of Engineering, Gifu University, 1–1 Yanagido, Gifu 501–11, Japan
  • Ueda Masayoshi
    Department of Applied Chemistry, Faculty of Engineering, Gifu University, 1–1 Yanagido, Gifu 501–11, Japan
  • Takahashi Yasutaka
    Department of Applied Chemistry, Faculty of Engineering, Gifu University, 1–1 Yanagido, Gifu 501–11, Japan

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  • Oxide Thin Film Diode Fabricated by Liq

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A p-type oxide thin film, NiO, and an n-type thin film, ZnO, were fabricated by a liquid phase method using metal acetates as starting reagents. Both the films were transparent, uniform in thickness and porous. By repetition of coating of the n- and p-type films a p-n contact was formed. The contact exhibited nonlinear and rectifying I-V characteristics. A Mott-Schottky plot of the p-n contact revealed that the carrier concentration in each film was constant throughout the thickness and the carrier concentration in NiO was much lower than that estimated from the results obtained using the van der Pauw method. The very low carrier concentration may be due to the existence of interface and surface states in the multilayered porous film.

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