Effects of the Partial Pressure of Copper(1)Hexafluoroacetylacetonate Trimethylvinylsilane on the Chemical Vapor Deposition of Copper

  • Lee Seung–Yun
    Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon 305–701, Korea
  • Rha Sa–Kyun
    Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon 305–701, Korea
  • Lee Won–Jun
    Advanced Technology Laboratory, LG Semicon Co., Ltd., Cheongju 360–480, Korea
  • Kim Dong–Won
    Department of Materials Science and Engineering, Kyonggi University, Suwon 440–760, Korea
  • Hwang Jeong–Sug
    Department of Chemistry, Taejon University, Taejon 300–716, Korea
  • Park Chong–Ook
    Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon 305–701, Korea

書誌事項

タイトル別名
  • Effects of the Partial Pressure of Copper (I) Hexafluoroacetylacetonate Trimethylvinylsilane on the Chemical Vapor Deposition of Copper.
  • Effects of the Partial Pressure of Copp

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説明

The effects of the partial pressure of precursor on the metalorganic chemical vapor deposition of copper were investigated. Copper was deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane as a metalorganic precursor on TiN/Ti/Si substrates in a low-pressure warm-wall chemical vapor deposition reactor. The deposition rate of copper film was a constant value at a partial pressure higher than 0.048 Torr and decreased to below the constant value at a partial pressure lower than 0.048 Torr. The incubation time for copper nucleation decreased with increasing partial pressure of the precursor. The resistivity of copper film decreased to 2.00 µ Ω· cm with increasing partial pressure of the precursor. At a partial pressure lower than 0.048 Torr, copper did not nucleate inside the trench so that the step coverage of copper film became very poor.

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