Effects of the Partial Pressure of Copper(1)Hexafluoroacetylacetonate Trimethylvinylsilane on the Chemical Vapor Deposition of Copper
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- Lee Seung–Yun
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon 305–701, Korea
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- Rha Sa–Kyun
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon 305–701, Korea
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- Lee Won–Jun
- Advanced Technology Laboratory, LG Semicon Co., Ltd., Cheongju 360–480, Korea
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- Kim Dong–Won
- Department of Materials Science and Engineering, Kyonggi University, Suwon 440–760, Korea
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- Hwang Jeong–Sug
- Department of Chemistry, Taejon University, Taejon 300–716, Korea
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- Park Chong–Ook
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon 305–701, Korea
書誌事項
- タイトル別名
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- Effects of the Partial Pressure of Copper (I) Hexafluoroacetylacetonate Trimethylvinylsilane on the Chemical Vapor Deposition of Copper.
- Effects of the Partial Pressure of Copp
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説明
The effects of the partial pressure of precursor on the metalorganic chemical vapor deposition of copper were investigated. Copper was deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane as a metalorganic precursor on TiN/Ti/Si substrates in a low-pressure warm-wall chemical vapor deposition reactor. The deposition rate of copper film was a constant value at a partial pressure higher than 0.048 Torr and decreased to below the constant value at a partial pressure lower than 0.048 Torr. The incubation time for copper nucleation decreased with increasing partial pressure of the precursor. The resistivity of copper film decreased to 2.00 µ Ω· cm with increasing partial pressure of the precursor. At a partial pressure lower than 0.048 Torr, copper did not nucleate inside the trench so that the step coverage of copper film became very poor.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 36 (8), 5249-5252, 1997
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206249818752
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- NII論文ID
- 10004510265
- 210000041631
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4287659
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDLサーチ
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- CiNii Articles
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- 抄録ライセンスフラグ
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