Characterization of Dopant Interdiffusion and Power Reduction on TiSi<sub>2</sub> Local Wiring Technology in Sub-Half-Micron Complementary Metal Oxide Semiconductor

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  • Ida Jiro
    VLSI Research and Development Center, OKI Electric Industry Co., Ltd., 550–1 Higashi–asakawa–cho, Hachioji, Tokyo 193, Japan
  • Ohtomo Atsushi
    VLSI Research and Development Center, OKI Electric Industry Co., Ltd., 550–1 Higashi–asakawa–cho, Hachioji, Tokyo 193, Japan

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  • Characterization of Dopant Interdiffusion and Power Reduction on TiSi2 Local Wiring Technology in Sub-Half-Micron Complementary Metal Oxide Semiconductor.
  • Characterization of Dopant Interdiffusi

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The TiSi2 local wiring technology has been newly characterized from the viewpoints of dopant interdiffusion and power reduction. It was found that only the p+/n junction degrades when TiSi2 local wiring connects the n+ layer and p+ layer. The results of electrical measurements using a set of new test patterns suggest the reason to be that boron does not diffuse from TiSi2 to Si due to the high efficiency of TiB formation. More than a 20% reduction in power dissipation at a low-power supply voltage of 1 V was obtained, which demonstrates that the scheme is promising for low-power sub-half-micron complementary metal oxide semiconductor.

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