Electrically Isolated Metal-Semiconductor Field Effect Transistors and Logic Circuits on Homoepitaxial Diamonds.
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- Kawarada Hiroshi
- School of Science and Engineering, Waseda University, 3–4–1 Ohkubo, Shinjuku–ku, Tokyo 169, Japan
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- Itoh Masahiro
- School of Science and Engineering, Waseda University, 3–4–1 Ohkubo, Shinjuku–ku, Tokyo 169, Japan
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- Hokazono Akira
- School of Science and Engineering, Waseda University, 3–4–1 Ohkubo, Shinjuku–ku, Tokyo 169, Japan
書誌事項
- タイトル別名
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- Electrically Isolated Metal-Semiconduct
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説明
Isolated metal-semiconductor field effect transistors (MESFETs) have been fabricated on homoepitaxial diamonds grown by microwave plasma chemical vapor deposition. Source, drain and channel regions are fabricated using the surface p-type semiconductive layer unique to hydrogen-terminated diamond surfaces. Other areas are irradiated by an argon beam to obtain highly resistive regions. The maximum transconductance of the isolated MESFETs with 7 µ m gate length is 4.5 mS/mm, which is comparable to that of silicon MOSFET with the same gate length. NOT, NAND, NOR, and R-S flip-flop circuits have been fabricated for the first time on diamond using enhancement-mode active loads.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 35 (9B), L1165-L1168, 1996
The Japan Society of Applied Physics
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キーワード
詳細情報 詳細情報について
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- CRID
- 1390001206250231296
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- NII論文ID
- 210000040245
- 110003925281
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- NII書誌ID
- AA10650595
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/00218979
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- NDL書誌ID
- 4060297
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可