Far-Infrared Reflectance Study of Coupled Longitudinal-Optical Phonon-Hole Plasmon Modes and Transport Properties in Heavily Doped p-Type GaAs.
-
- Fukasawa Ryoichi
- Kansai Advanced Research Center, Communications Research Laboratory, Ministry of Posts and Telecommunications, 588–2 Iwaoka, Kobe 651–24, Japan
-
- Sakai Kiyomi
- Kansai Advanced Research Center, Communications Research Laboratory, Ministry of Posts and Telecommunications, 588–2 Iwaoka, Kobe 651–24, Japan
-
- Perkowitz Sidney
- Department of Physics, Emory University, Atlanta, Georgia 30322–2430, U.S.A
Bibliographic Information
- Other Title
-
- Far-Infrared Reflectance Study of Coupl
Search this article
Abstract
We measured room-temperature far-infrared reflectance spectra of ten p-type, Be-doped, molecular-beam-epitaxy-grown GaAs films with hole densities from 6.3× 1017 to 2.9× 1019 cm-3 and examined the frequency-dependent dielectric function of coupled phonon-heavily damped hole plasmon modes in these samples without the complications that arise in Raman scattering experiments. Both a two-oscillator dielectric function ε (ω ), and Kukharskii's factorized form ε K(ω ) for the dielectric function, reproduce the data well. The plasmon-like modes clearly appear in the reflectance spectra, although they are suppressed in the Raman spectra, and we find that their frequencies are best given by finding the solutions of ε (ω )=0 in the complex ω -plane. The infrared data also accurately yield the hole drift mobilities when we consider values for the Hall scattering factor in p-type GaAs.
Journal
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 36 (9A), 5543-5548, 1997
The Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1390001206250355840
-
- NII Article ID
- 110003906102
- 210000041688
- 130004524023
-
- NII Book ID
- AA10457675
-
- ISSN
- 13474065
- 00214922
-
- NDL BIB ID
- 4307505
-
- Text Lang
- en
-
- Data Source
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed