Photo-Enhanced Activation of Hydrogen-Passivated Magnesium in P-Type GaN Films.

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  • Kamiura Yoichi
    Faculty of Engineering, Okayama University, 3–1–1 Tsushima–naka, Okayama 700–8530, Japan
  • Yamashita Yoshifumi
    Faculty of Engineering, Okayama University, 3–1–1 Tsushima–naka, Okayama 700–8530, Japan
  • Nakamura Shuji
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan

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  • Photo-Enbanced Activation of Hydrogen-Passivated Magnesium in P-Type GaN Films
  • Photo-Enbanced Activation of Hydrogen-P

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Abstract

We studied the effect of UV-light irradiation on annealing of as-grown Mg-doped GaN films by resistivity and Hall measurements. The annealing temperature where the resistivity reduction due to the electrical activation of hydrogen-passivated Mg occurred with the increase of hole density and the decrease of hole mobility, was reduced from 550 to 450°C by the irradiation of UV light with a peak wavelength around 350 nm. This suggests that electronic excitation reduces the thermal stability of Mg-H complexes in GaN.

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