Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy.
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- Koh Shinji
- Department of Applied Physics, Faculty of Engineering, The University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113–8656, Japan
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- Kondo Takashi
- Department of Materials Science, Faculty of Engineering, The University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113–8656, Japan
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- Ishiwada Tetsuya
- Department of Materials Science, Faculty of Engineering, The University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113–8656, Japan
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- Iwamoto Chihiro
- Engineering Research Institute, Faculty of Engineering, The University of Tokyo, 2–11–16 Yayoi, Bunkyo–ku, Tokyo 113–8656, Japan
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- Ichinose Hideki
- Department of Materials Science, Faculty of Engineering, The University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113–8656, Japan
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- Yaguchi Hiroyuki
- Department of Applied Physics, Faculty of Engineering, The University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113–8656, Japan
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- Usami Takanori
- Research Center for Advanced Science and Technology, The University of Tokyo, 4–6–1 Komaba, Meguro–ku, Tokyo 153–8904, Japan
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- Shiraki Yasuhiro
- Research Center for Advanced Science and Technology, The University of Tokyo, 4–6–1 Komaba, Meguro–ku, Tokyo 153–8904, Japan
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- Ito Ryoichi
- Department of Applied Physics, Faculty of Engineering, The University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113–8656, Japan
書誌事項
- タイトル別名
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- Sublattice Reversal in GaAs Si GaAs 100
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説明
Sublattice reversal in III-V compound semiconductors grown on group-IV epitaxial layers on III-V substrates has been proposed for fabricating nonlinear optical devices with domain-inverted compound semiconductor structures. Sublattice reversal epitaxy is demonstrated in the GaAs/Si/GaAs (100) system and confirmed by reflection high energy electron diffraction, cross-sectional transmission electron microscopy, anisotropic etching, and optical second-harmonic generation measurements. The present sublattice reversal seems to be assisted by self annihilation of antiphase domains generated at GaAs/Si interfaces.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 37 (12B), L1493-L1496, 1998
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206250486912
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- NII論文ID
- 210000044380
- 110003927366
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- NII書誌ID
- AA10650595
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- NDL書誌ID
- 4630793
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可