Electrical Characteristics of Pt/SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/Ta<sub>2</sub>O<sub>5</sub>/Si Using Ta<sub>2</sub>O<sub>5</sub> as the Buffer Layer

DOI Web Site Web Site Web Site 参考文献22件
  • Choi Hoon Sang
    Department of Materials Science and Engineering, Korea University, Songbukgu, Seoul 136-701, Korea
  • Kim Yong Tae
    Semiconductor Device Laboratory, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650, Korea
  • Kim Seong-Il
    Semiconductor Device Laboratory, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650, Korea
  • Choi In-Hoon
    Department of Materials Science and Engineering, Korea University, Songbukgu, Seoul 136-701, Korea

書誌事項

タイトル別名
  • Electrical Characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si Using Ta2O5 as the Buffer Layer.

この論文をさがす

抄録

We propose the Pt/SrBi2Ta2O9/Ta2O5/Si structure for the application of nondestructive read-out memory. The Ta2O5 films were deposited on p-type Si (100) substrates by rf-magnetron sputtering and the SrBi2Ta2O9 films were deposited by metal organic deposition (MOD) method. Coercive field that decisively affects on the memory window becomes greater by inserting the Ta2O5 buffer layer between ferroelectric thin film and silicon substrate and thus the memory window also increases with an electric field to the SrBi2Ta2O9. The C-V characteristics of the Pt/SrBi2Ta2O9 (195 nm)/Ta2O5 (36 nm)/Si structure show memory window of 0.5-2.7 V at the applied voltage of 3-7 V. The leakage current density is 1.7 × 10-8 A/cm2, even at the high voltage of 10 V.

収録刊行物

参考文献 (22)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ