Characteristics of Tunneling Nitride Grown by Electron Cyclotron Resonance Nitrogen-Plasma Nitridation and Its Application to Low-Voltage Electrical Erasable-Programmable Read-Only Memory.

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  • Min Kyeong-Sik
    Advanced DRAM Design Department, Hyundai Electronics Industries Co., Ltd., 1 Hyangjeong-dong, Hungduk-gu, Cheongju-si 361-725, Korea
  • Chung Jin-Yong
    Advanced DRAM Design Department, Hyundai Electronics Industries Co., Ltd., 1 Hyangjeong-dong, Hungduk-gu, Cheongju-si 361-725, Korea
  • Lee Kwyro
    Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusong-dong, Yusong-gu, Taejeon 305-701, Korea

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Characteristics of a tunneling-nitride insulator grown by low-temperature electron cyclotron resonance (ECR) nitrogen-plasma nitridation are presented. The ECR nitridation shows a very high growth rate at lower temperatures and the thickness is proportional to the growth time. For example, we obtain a thickness of 16 [nm] and a refractive index of 1.75 after the nitridation time of 80 [min] at 400°C. The barrier heights measured from the Fowler-Nordheim (F-N) tunneling current are 2.3 [eV] and 1.4 [eV] in the inversion and the accumulation modes, respectively. These lower heights allow us much faster programming and erasing times of an electrical erasable-programmable read-only memory (EEPROM) with the ECR nitride than those of the conventional EEPROM with the thermal oxide. A double-gate EEPROM with an ECR-nitride tunneling insulator was fabricated. Surprisingly, it does not show any threshold voltage (VTH) degradation even after 100,000 cycles of programming and erasing.

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