Intrinsic and Extrinsic Excitonic Features in MgS/ZnSe Superlattices Revealed by Microspectroscopy.

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  • Kumano Hidekazu
    Research Institute for Electronic Science, Hokkaido University, Sapporo 060-0812, Japan
  • Nashiki Hiroyuki
    Research Institute for Electronic Science, Hokkaido University, Sapporo 060-0812, Japan
  • Suemune Ikuo
    Research Institute for Electronic Science, Hokkaido University, Sapporo 060-0812, Japan
  • Suzuki Hideki
    Research Institute for Electronic Science, Hokkaido University, Sapporo 060-0812, Japan
  • Uesugi Katsuhiro
    Research Institute for Electronic Science, Hokkaido University, Sapporo 060-0812, Japan
  • He An-Qiang
    Japan Advanced Institute of Science and Technology (JAIST), Kanazawa 923-1292, Japan
  • Otsuka Nobuo
    Japan Advanced Institute of Science and Technology (JAIST), Kanazawa 923-1292, Japan

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Microspectroscopy of luminescence and optical reflection properties was performed on MgS/ZnSe superlattices with the spatial resolutions of ∼μm and ∼10 μm, respectively, to examine the origin of excitonic transitions. C1-HH1 well-defined excitonic peaks which originate from multi-monolayer (ML) variation of 4–5 ML height, formed predominantly at the ZnSe surfaces of MgS/ZnSe heterointerfaces, were found to make a significant contribution to the optical spectra. The detailed identification of these inhomogeneous C1-HH1 excitonic peaks and intrinsic C1-LH1 excitonic peaks, which are close in energy levels, is discussed on the basis of results of the present microspectroscopy studies and with respect to the temperature dependence of the luminescence spectra.

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