Visible Photoluminescence from Si<sup>+</sup>-Implanted SiO<sub>2</sub> Films after High-Temperature Rapid Thermal Annealing

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  • Tsai Jen-Hwan
    Department of Mathematics and Physics, Chinese Air Force Academy, Kangshan,Kaohsiung 820, Taiwan, R.O.C.
  • Yu Ann-Ting
    Department of Mathematics and Physics, Chinese Air Force Academy, Kangshan,Kaohsiung 820, Taiwan, R.O.C.
  • Sheu Bor-Chiou
    Department of Applied Physics, Chung-Cheng Institute of Technology, Ta-Hsi, Tao-Yuan 33509, Taiwan, R.O.C.

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タイトル別名
  • Visible Photoluminescence from Si+-Implanted SiO2 Films after High-Temperature Rapid Thermal Annealing.

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抄録

Two photoluminescence (PL) bands were observed in 4 × 1015 cm-2-fluence-Si+-implanted 100-nm-thick SiO2 films after rapid thermal annealing (RTA) at 950–1150°C with 2–4 eV excitation. The PL band at 2.2 eV was excited by 3.8 eV photons in the films after RTA in dry nitrogen while the other band at 1.9 eV was excited by 2.5 eV photons in the films after isochronal RTA in wet nitrogen. Moreover, the origin for the 2.2 eV energy band was found to be the same as that of the Eδ′ center. The origin of the 1.9 eV band could be ascribed to the non-bridging oxygen hole centers (NBOHC). The latter was more stable even at high temperatures and showed a stronger PL intensity than the former.

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