Photoluminescence Quenching by Optical Bias in AlGaAs/GaAs Single Quantum Wells.
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- Chavanapranee Tosaporn
- School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0072, Japan
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- Fujimoto Shin'go
- School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0072, Japan
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- Horikoshi Yoshiji
- School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0072, Japan
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抄録
Anomalous photoluminescence characteristics are reported for AlGaAs/GaAs single quantum wells with one-monolayer-thick InAs inserted at the center of the GaAs well under an external electric field. The photoluminescence produced by exciting only the quantum well is strongly quenched when simultaneous excitation is performed using a high-energy light which can excite both the quantum well and the AlGaAs barrier layers. Since no prominent increase in the photocurrent accompanies the photoluminescence quenching, an efficient recombination center becomes operative under the simultaneous high-energy excitation. A carrier trapping center in AlGaAs which becomes active as a nonradiative recombination center after trapping carriers is considered to explain the observed result.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 40 (11), 6477-6480, 2001
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206251718784
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- NII論文ID
- 210000050243
- 110004043484
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 5986192
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可