Experimental Results Obtained using Extreme Ultraviolet Laboratory Tool at New SUBARU.

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  • Kinoshita Hiroo
    Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology,<BR> 3-1-2 Kouto, Kamigori, Ako-gun, Hyogo 678-1201, Japan
  • Watanabe Takeo
    Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology,<BR> 3-1-2 Kouto, Kamigori, Ako-gun, Hyogo 678-1201, Japan

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We have designed three-aspherical-mirror optics that meets the specifications for 0.1 μm generation lithography, and are developing an extreme ultraviolet lithography (EUVL) laboratory tool suitable for device fabrication experiments. It operates at a wavelength of 13.5 nm and employs a three-mirror imaging system with a numerical aperture of 0.1. It is capable of replicating 65 nm patterns in an exposure field of 30 mm× 1 mm size. First, single-layer chemically amplified resists are investigated using the synchrotron radiation (SR) source of New SUBARU. From the sensitivity curve, it was found that the positive-tone resist DP603 and the negative-tone resist SAL601 have high gamma values and high sensitivities to the extreme ultraviolet exposure wavelength. Furthermore, exposure experiments using the three-aspherical mirror imaging system were performed. A minimum line width of 56 nm was demonstrated in an exposure area of 10 mm× 1 mm. We confirmed that the three-aspherical mirror imaging system is useful for developing EUVL technology.

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