Effect of Thermal Annealing on Band Edge Absorption Spectrum of Arsenic-Ion-Implanted GaAs.

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  • Lin Gong-Ru
    Graduate Institute of Opto-Electronic Technology, National Taipei University of Technology, 1, Sec. 3, Chung Hsiao East Rd., Taipei, 10643, Taiwan, R.O.C.
  • Pan Ci-Ling
    Institute of Electro-Optic Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan, R.O.C.

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We report the effects of annealing temperature on the near-band-gap transmittance, the absorption coefficient, and the evolution of shallow-level defects of arsenic-ion-implanted GaAs (hereafter referred to as GaAs:As+) using Fourier-transform infrared spectroscopy. The maximum above-band-gap transmittance and absorption coefficient are determined to be 0.4 and 6 × 103 cm-1, respectively. An anomalous absorption peak at the photon energy of 1.37–1.4 eV for the GaAs:As+ samples annealed at lower than 500°C is observed. By either fitting the absorption curve, the band-gap energy of rapid-thermal-annealed GaAs:As+ is evaluated, which blue shifts from 1.36 eV to 1.41 eV as the annealing temperature increases from 300°C to 800°C. The slightly rising absorption spectra at the near-band-gap region suggest the existence of defects and scattering centers. The activation energies and formatting mechanisms of the dense defects in the Rapid-thermal-annealed GaAs:As+ samples were identified. By characterizing the differential absorption spectra, the eVolution of some defect-related absorption bands during the high-temperature annealing process were observed and the correlated structural phenomena were explained.

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