Crystallization of 3C-SiC(III) Thin Films Grown on Si(III) Substrates by Post Thermal Annealing

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  • Lee Hae Gwon
    Quantum-functional Semiconductor Research Center and Department of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea
  • Kang Tae Won
    Quantum-functional Semiconductor Research Center and Department of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea
  • Hong Sung Ui
    Electronics and Telecommunications Research Institute, Taejon 305-606, Korea
  • Paek Mun Cheol
    Electronics and Telecommunications Research Institute, Taejon 305-606, Korea
  • Kim Tae Whan
    Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea

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タイトル別名
  • Crystallization of 3C-SiC (111) Thin Films Grown on Si (111) Substrates by Post Thermal Annealing.
  • Crystallization of 3C SiC 3 Thin Films Grown on Si 3 Substrates by Post Thermal Annealing

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抄録

Thermal treatment of SiC thin films grown on p-Si (111) substrates by plasma enhanced chemical vapor deposition was performed to crystallize as-grown amorphous SiC layers. Nomarski optical microscopy and X-ray diffraction measurements showed that the as-grown SiC thin films on p-Si (111) substrates were amorphous and that the films annealed at 1100°C were crystallized with 3C-SiC (111) orientation. The results of X-ray photoelectron spectroscopy measurements showed that in the crystallized films, good stoichiometry was realized for the components of the SiC epilayer. These results indicate that SiC thin films grown on p-Si (111) substrates were crystallized by thermal treatment.

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