Bulk Laser Damage in CsLiB6O10 Crystal and Its Dependence on Crystal Structure.

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  • Yoshimura Masashi
    Department of Electrical Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan
  • Kamimura Tomosumi
    Department of Electrical Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan
  • Murase Kouki
    Department of Electrical Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan
  • Mori Yusuke
    Department of Electrical Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan
  • Yoshida Hidetsugu
    Institute of Laser Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan
  • Nakatsuka Masahiro
    Institute of Laser Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan
  • Sasaki Takatomo
    Department of Electrical Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan

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  • Bulk Laser Damage in CsLiB<sub>6</sub>O<sub>10</sub> Crystal and Its Dependence on Crystal Structure

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Abstract

We investigated bulk laser damage in CsLiB6O10 (CLBO) and its relation to crystal structure. The damage thresholds of CLBO, with the laser irradiation direction //‹ 001› and polarization //‹ 100›, were determined to be 29 GW/cm2 at 1.064 μ m, and 6.4 GW/cm2 at 0.266 μ m, using a single-shot Q-switched Nd:YAG laser in a transverse and a longitudinal single mode, respectively. It was also found that the laser damage thresholds strongly depend on the direction of laser irradiation and polarization. The threshold and morphology with crystallographically oriented cracks suggest that the ‹ 001› direction is structurally weak, which is consistent with the result of the mechanical strength tests.

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