Negative Differential Resistance of CaF2/CdF2 Triple-Barrier Resonant-Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy.

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  • Watanabe Masahiro
    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152–8552, Japan
  • Aoki Yuichi
    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152–8552, Japan
  • Saito Wataru
    Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152–8552, Japan
  • Tsuganezawa Mika
    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152–8552, Japan

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  • Negative Differential Resistance of CaF<sub> 2</sub>/CdF<sub> 2</sub> Triple-Barrier Resonant-Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy

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Abstract

Room-temperature negative differential resistance (NDR) of triple-barrier cadmium di-fluoride (CdF2)/calcium di-fluoride (CaF2) heterostructure resonant-tunneling diode (RTD) on a Si(111) substrate has been demonstrated. CdF2/CaF2 multilayered heterostructures were grown on a Si(111) substrate using partially ionized beam epitaxy to obtain atomically flat interfaces. The RTD structures, which consist of triple CaF2 energy barriers and double CdF2 quantum wells, were fabricated by electron beam (EB) lithography and dry etching to avoid thermal and chemical damage to the CdF2 layers. In the current-voltage characteristics of the RTD, NDR was clearly observed even at room temperature and the maximum peak-to-valley (P/V) ratio was about 6.

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