Terahertz Radiation from (111)InAs Surface Using 1.55μm Femtosecond Laser Pulses

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  • Kondo Takashi
    Research Center for Superconducting Materials and Electronics, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan
  • Sakamoto Masanao
    Research Center for Superconducting Materials and Electronics, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan
  • Tonouchi Masayoshi
    Research Center for Superconducting Materials and Electronics, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan CREST, Japan Science and Technology Corporation, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan
  • Hangyo Masanori
    Research Center for Superconducting Materials and Electronics, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan

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タイトル別名
  • Terahertz Radiation from (111) InAs Surface Using 1.55.MU.m Femtosecond Laser Pulses.
  • Terahertz Radiation from 111 InAs Surface Using 1.55マイクロm Femtosecond Laser Pulses

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説明

We report the first observation of terahertz (THz) radiation from an undoped (111) InAs surface excited by 1.55 μm femtosecond laser pulses. The surface illuminated by an unfocused beam at an incidence angle of 45 degrees measured with respect to the surface normal emits THz radiation with weak dependence of the amplitude on the azimuthal angle. The results indicate that the radiation excited by the unfocused beam at a power density less than ~1 W/cm2 is mainly explained by the surge current effect accompanied by a small component associated with the optical rectification effect.

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