Control of the Step Coverage Behavior of Gate a-SiN<sub>x</sub>:H

DOI Web Site Web Site Web Site 参考文献20件
  • Chae Gee-Sung
    R&D Department, FRONTEC Inc., 3-31 Akedori, Izumi-ku, Sendai 981-32, Japan
  • Kim Kwang-Nam
    R&D Department, FRONTEC Inc., 3-31 Akedori, Izumi-ku, Sendai 981-32, Japan
  • Kitagawa Hitoshi
    R&D Department, FRONTEC Inc., 3-31 Akedori, Izumi-ku, Sendai 981-32, Japan
  • Oba Tomofumi
    R&D Department, FRONTEC Inc., 3-31 Akedori, Izumi-ku, Sendai 981-32, Japan

書誌事項

タイトル別名
  • Control of the Step Coverage Behavior of Gate a-SiNx:H.

この論文をさがす

説明

To overcome the trade-off in the properties of a-SiNx:H, which is a trade-off between the flat region of gate metal and the step at its side, we have studied the key control factor for determining the step coverage behavior of a-SiNx:H. To that end, a double rf-biased plasma-enhanced chemical vapor deposition (DRB-PECVD) system which was developed with the aid of Professor Ohmi of Tohoku University, was very helpful. With the DRB-PECVD system, it is possible to control the flux of ions, which plays a major role in determining the film qualities of a-SiNx:H. With vertical control of the homogeneity of a-SiNx:H, it was demonstrated that the step coverage behavior of a-SiNx:H is determined by the intrinsic film stress which became more compressive (-) with increasing effect of bombardment by ions extracted and accelerated by the substrate bias rf2 of the DRB-PECVD system. a-SiNx:H film can be easily damaged by thermal quenching during the cooling process after the end of deposition as the intrinsic film stress of a-SiNx:H becomes increasingly compressive (-). Although the damage can be removed by increasing the thickness of a-SiNx:H film to greater than 200nm as a gate insulator for a thin film transistor-liquid crystal display (TFT-LCD) panel, it is possible for us to remove the thermal quenching damage on a-SiNx:H film even when thickness is less than 200 nm.

収録刊行物

参考文献 (20)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ